(China (Mainland))
Product Summary
The IXFH13N50 is a N-channel enhancement mode. The applications of it include: (1)DC-DC converters; (2)Uninterruptible Power Supplies (UPS); (3)Battery chargers ; (4)Switched-mode and resonant-mode power supplies; (5)DC choppers; (6)Temperature and lighting controls; (7)Low voltage relays.
Parametrics
IXFH13N50 absolute maxing ratings: (1)On the condition of TJ=25℃ to 150℃, VDSS: max=500V; (2)On the conditions of TJ=25℃ to 150℃; RGS=1MΩ, VDGR: max=500V; (3)On the condition of Continuous, VGS: max=±20V; (4)On the condition of Transient, VGSM: max=±30V; (5)On the condition of TC=25℃, ID25: max=13A; (6)On the conditions of TC=25℃, pulse width limited by TJM, IDM: max=52A; (7)On the condition of TC=25℃, IAR: max=13A; (8)On the condition of TC=25℃, EAR: max=18mJ; (9)On the conditions of IS≤IDM, di/dt≤100A/μs, VDD≤VDSS, TJ≤150℃, RG=2Ω, dv/dt: max=5V/ns; (10)On the condition of TC = 25℃, PD: max=180W.
Features
IXFH13N50 features: (1)International standard packages; (2)Low RDS (on) HDMOS process; (3)Rugged polysilicon gate cell structure; (4)Unclamped Inductive Switching (UIS) rated; (5)Low package inductance: easy to drive and to protect; (6)Fast intrinsic Rectifier.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IXFH13N50 |
Ixys |
MOSFET 500V 13A |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
IXFH100N25P |
Ixys |
MOSFET 100 Amps 250V 0.027 Rds |
Data Sheet |
Negotiable |
|
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|
IXFH10N100P |
Ixys |
MOSFET 10 Amps 1000V |
Data Sheet |
Negotiable |
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|
IXFH110N10P |
Ixys |
MOSFET 110 Amps 100V 0.015 Rds |
Data Sheet |
Negotiable |
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|
IXFH110N15T2 |
Ixys |
MOSFET 110 Amps 150V |
Data Sheet |
Negotiable |
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|
IXFH120N15P |
Ixys |
MOSFET 120 Amps 150V 0.016 Rds |
Data Sheet |
Negotiable |
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|
IXFH12N120P |
Ixys |
MOSFET 12 Amps 1200V 1.15 Rds |
Data Sheet |
Negotiable |
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